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| AON7401 P-Channel Enhancement Mode Field Effect Transistor General Description The AON7401/L uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. AON7401 and AON7401L are electrically identical. -RoHS Compliant -AON7401L is Halogen Free Features VDS (V) = -30V (VGS = -10V) ID = -9A RDS(ON) < 14m (VGS = -10V) RDS(ON) < 36m (VGS = -4.5V) DFN 3x3 Top View Bottom View D Pin 1 S S S G D D D D G S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Continuous Drain Current Power Dissipation Power Dissipation B C Maximum -30 25 -20 -20 -80 -9 -7 27 11 1.6 1 -55 to 150 Units V V TC=25C TC=100C TA=25C TA=70C TC=25C TC=100C TA=25C A ID IDM IDSM PD PDSM TJ, TSTG A W TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case D C Symbol t 10s Steady-State Steady-State RJA RJC Typ 30 60 4 Max 40 75 4.5 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON7401 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-30V, VGS=0V TJ=55C VDS=0V, VGS= 25V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-9A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-5A Forward Transconductance VDS=-5V, ID=-10A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C -1.7 -80 11 14 28 27 -0.7 -1 -3 2060 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 370 295 2.4 30 VGS=-10V, VDS=-15V, ID=-9A 4.6 10 11 VGS=-10V, VDS=-15V, RL=1.6, RGEN=3 IF=-9A, dI/dt=500A/s 9.4 24 12 14 35 18 3.6 39 2600 14 17 36 S V A pF pF pF nC nC nC ns ns ns ns ns nC m -2.2 Min -30 -1 -5 100 -3 Typ Max Units V A nA V A STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-9A, dI/dt=500A/s A: The value of R JA is measured with the device in a still air environment with T A =25C. The power dissipation PDSM and current rating I DSM are based on TJ(MAX)=150C, using steady state junction-to-ambient thermal resistance. B. The power dissipation PD is based on T J(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=150C. D. The RJA is the sum of the thermal impedence from junction to case R JC and case to ambient. 150 E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. Rev0: Jun 2008 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON7401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 -10V 60 -ID (A) -6V -5V -4.5V 40 -4V 20 VGS=-3.5V 0 0 1 2 3 4 5 -VDS (Volts) Figure 1: On-Region Characteristics 0 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics 20 125C 25C 60 80 VDS=-5V -ID(A) Normalized On-Resistance 40 45 40 35 RDS(ON) (m) 30 25 20 15 10 5 0 5 10 15 20 V GS=-10V VGS=-4.5V 1.6 VGS=-10V ID=-9A 1.4 1.2 1 VGS=-4.5V ID=-5A 0.8 0.6 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 ID=-9A 25 RDS(ON) (m) 150 10 1 0.1 125C -IS (A) 20 0.01 0.001 0.0001 25C 0.00001 2 4 6 8 10 0.0 125C 25C 15 10 5 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON7401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 -VGS (Volts) 6 4 2 0 0 5 10 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics 3000 VDS=-15V ID=-9A Capacitance (pF) 2500 2000 1500 1000 500 0 0 Crss 5 10 15 20 25 30 Ciss VDS=VGS ID=1mA 1.4 50oss C 1.8 -VDS (Volts) Figure 8: Capacitance Characteristics 100 50 10s 100s Power (W) 1ms 40 30 20 10 0 0.001 800 140 80 0.5 15 7 TJ(Max)=150C TA=25C 220 140 10 -ID (Amps) 1 RDS(ON) limited TJ(Max)=150C TA=25C 0.1 1 DC 0.1 10ms 0.1s 1s 10s 0.01 10 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) 0.01 10 ZJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=75C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 0.01 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton Single FUNCTIONS AND RELIABILITY WITHOUT NOTICE Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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